Highly Efficient Power Conversion in Clean Energy Applications

Discover how to achieve high efficiency in energy conversion of alternating current (AC) and direct current (DC) utilizing next generation field-effect transistors (FETs) made of gallium nitride (GaN). These devices offer lower losses, higher switching speeds, and smaller sizes than conventional silicon-based FETs.

Learn how to:

Grasp the superior characteristics of GaN FETs over silicon FETs, including efficiency and size benefits.
Discover the role of GaN FETs in boosting AC/DC energy conversion efficiency.
Understand how integrating GaN FETs elevates power system performance and reliability.
Explore design considerations for WBG FETs and how high-bandwidth current sensors address associated challenges.

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