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Self-Powered Single-Channel Isolated GaN FET Gate Driver with Regulated Bipolar Output Drive

AHV85111

Self-Powered Single-Channel Isolated GaNFET Gate Driver with Regulated Bipolar Output Drive

AHV85111 ECAD Model
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Description

Top Features

Typical Applications

Packaging

The AHV85111 isolated gate driver is optimized for GaN FETs in multiple applications and topologies. An isolated dual positive/negative output bias supply is integrated into the driver, eliminating the need for any external gate drive auxiliary bias supply or high-side bootstrap. The bipolar output rails, with adjustable and regulated positive rail, improves dv/dt immunity, greatly simplifies the system design, and reduces EMI through reduced total common-mode (CM) capacitance. It also allows the driving of a floating switch in any location in a switching power topology.

  • Transformer isolation barrier
  • Power-Thru integrated isolated bias
    • No need for high-side bootstrap
    • No need for external secondary-side bias  
  • AEC-Q100 Grade 2 qualification
  • Bipolar drive output with adjustable regulated positive rail
  • Built-in primary-side 3.3V REF bias output
  • 50ns propagation delay
  • Separate drive output pins: pull-up (2.8 Ω) and pull-down (1.0 Ω)
  • Supply voltage 10.8 V < VDRV < 13.2 V
  • Undervoltage lockout on primary VDRV and secondary VSEC
  • Enable pin with fast response
  • Continuous ON capability—no need to recycle IN or recharge bootstrap capacitor
  • CMTI > 100 V/ns dv/dt immunity
  • Creepage distance 8.4 mm
  • Safety Regulatory Approvals
    • 5 kV RMS VISO per UL 1577
    • 8 kV pk VIOTM maximum transient isolation voltage
    • 1 kV pk maximum working isolation voltage

The device is available in a compact low-profile surface-mount NH package. Several protection features are integrated, including undervoltage lockout on primary and secondary bias rails, internal pull-down on IN pin and OUTPD pin, fast response enable input, overtemperature shutdown, and OUT pulse synchronization with first IN rising edge after enable (avoids asynchronous runt pulses).

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Part Number Specifications and Availability

Part Number Specifications and Availability

AHV85111 Product Overview

The AHV85111 isolated gate driver is optimized for driving GaN FETs in multiple applications. An isolated dual positive/negative output bias supply is integrated into the driver device, eliminating external gate drive auxiliary bias supply or high-side bootstrap.

Documentation and Resources