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Allegro’s XtremeSense™ TMR technology (Tunnel Magnetoresistance) provides the highest magnetic sensitivity, the lowest power consumption, and the smallest size by comparison to other magnetic technologies such as Hall, AMR, and GMR. Accelerating various applications from renewable energy systems, xEV, and connected consumer devices, Allegro’s XtremeSense TMR technology enables current and position sensors to achieve industry-leading performance figures and cost levels.
Efficient Power Conversion
Accurately measures the full dynamic range and provides a cleaner signal.
Adoption of Wide Bandgap Transistors
Wide bandgap transistors such as GAN and SiC require high bandwidth current sensors which XtremeSense TMR achieves without sacrificing accuracy and resolution.
Reduce the Energy Footprint
Delivers the lowest power consumption in any magnetic sensing product category.
TMR is an ideal fit for high growth industries such as automotive, industrial and consumer goods that require higher accuracy, greater bandwidth and lower power consumption.
At the heart of XtremeSense TMR technology is a thin-film magneto-resistive device, which is called a “Magnetic Tunnel Junction” (MTJ). In its simplest form, the MTJ consists of two electric-conducting magnetic layers on either side of a thin but highly robust insulating layer. One magnetic layer has a fixed magnetic moment direction, while the other can change freely to follow the direction of the local magnetic field.
For more information about the performance advantages of TMR versus other magnetic sensing technologies, please read our From Hall Effect to TMR application note.
| Product | Description | |
|---|---|---|
| CT110 | High Linearity/High Resolution Contact Current Sensor | |
| CT415 CT416 CT417 CT418 |
TMR Current Sensor with Ultra-Low Noise and <1% Total Error | |
| CT425 CT426 CT427 CT428 |
TMR Current Sensor with Ultra-Low Noise and <0.7% Total Error | |
| CT430 CT431 CT432 CT433 |
TMR Current Sensor with Ultra-Low Noise, <0.7% Total Error and Common-Mode Field Rejection in SOICW-16 Package |
The relative magnetization direction of the Free Layer and the Reference Layer determines the resistance of the MTJ. A parallel magnetization direction achieves the lowest possible resistance level. The anti-parallel magnetization direction enables the highest possible resistance level.
This variation in electrical resistance is then immediately detected and amplified to accurately sense the local magnetic field. This feature creates the TMR advanced sensor with higher sensitivity, lower power consumption, and stable characteristics.
TMR sensors more accurately measure the full dynamic range. These sensors have excellent working dynamic range, with high linearity, low hysteresis, and high sensitivity characteristics (that is, the magneto-resistive response curve has a steep slope).
