Quality Standards and Environmental Certifications
×
×

Form Unavailable

In accordance with your Cookie preferences this form is not currently available. Should you wish to make a submission please allow Performance cookies to run in your browser session. You can access and change your preferences via the Cookie Settings button below or through our Footer link ‘Cookie Notice’ > ‘Cookie Settings’. If you still have issues seeing the form after accepting cookies please try and clear your local cookies and reload the page and accept the Performance cookies again.

NOTE: The AHV85000 and AHV85040 must be purchased as a dual chipset.

GaN FET Isolated Gate Driver Dual Chipset

AHV85000, AHV85040

DFN -10 Package

The AHV85000 and AHV85040 is a dual chipset that offers a flexible isolated gate drive for GaN FETs with the benefits of Power-Thru technology. This simplifies system design, reduces EMI, and supports driving a floating switch in various power applications.

ECAD Model
Download Datasheet
Navigate

Description

Top Features

Typical Applications

Packaging

The AHV85000 and AHV85040 is a dual chipset that offers a cost optimized solution for isolated gate drive for GaN FETs. When combined with one of the recommended external transformers, it provides a self-powered isolated gate drive solution that is ideal for GaN FETs in multiple applications and topologies. A selection of recommended third-party transformers are available, each optimized for different drive voltage and gate charge characteristics, including E-mode GaN (6 V drive) and Cascode-GaN (12 V drive).

The chipset transmits both PWM signal and gate bias power through the external transformer, eliminating the need for any external gate drive auxiliary bias supply or high-side bootstrap. This greatly simplifies the system design and reduces EMI through reduced total common-mode (CM) capacitance. It also allows the driving of a floating switch in any location in a switching power topology.

  • Dual chipset transmits both PWM signal & bias power through a single external isolation transformer
    • No high-side bootstrap  
    • No external secondary-side bias supply
  • 50 ns propagation delay (with recommended transformers)
  • Separate drive output pins: pull-up (2.8 Ω) and pull-down (1.0 Ω)
  • Supply voltage 7 V < VDRV < 13.2 V
  • Undervoltage lockout on primary VDRV and secondary VSEC
  • Enable pin with fast response
  • Continuous ON capability—no need to recycle IN or recharge bootstrap capacitor
  • CMTI > 100 V/ns dv/dt immunity (with recommended transformers)
  • Creepage distance > 4 or 8 mm (with recommended transformers)
  • AC-DC and DC-DC converters: Totem-pole PFC, LLC half-/full-bridge, SR drive, Multi-level converters, Phase-shifted full-bridge, High-side disconnect
  • Three-phase: Vienna rectifier, T-type inverter
  • Industrial: Transportation, Robotics
  • Grid Infrastructure: Micro-inverters, Solar

The dual chipset is available in a pair of 3x3 mm DFN10 surfacemount 3x3 mm EJ packages, allowing for minimal PCB footprint.

EJ Package Documentation

× not found

Part Number Specifications and Availability

Documentation and Resources

Documentation

Filter Document Type:
All Types
All Types Application Note
Documents Found: 32
Document Type Document Name
Application Note
Design of Transformers for Use with the AHV85000 + AHV85040 Chip Set