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This is a pre-release product, engineering samples coming soon.

Self-Powered Isolated SiC Driver with Power-Thru Integrated Isolated Bias Supply

AHV85311

AHV85311 Self-Powered Isolated SiC Driver with Power-Thru Integrated Isolated Bias Supply Product Image

The AHV85311 isolated gate driver is optimized for driving discrete SiC FETs in power supply and conversion applications (OBC, DC/DCs, solar inverters). As part of the Power-Thru family, it uniquely integrates the secondary gate drive bias supply reducing BoM, space, and costs.

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Description

Top Features

Typical Applications

Packaging

The AHV85311 isolated gate driver is optimized for driving discrete SiC FETs in multiple applications, such as automotive On-Board-Chargers (OBC), solar inverters, industrial robotics, and general power supply applications.

An isolated dual positive/negative output bias supply is integrated into the driver to eliminate the need for external gate drive auxiliary bias supply or high-side bootstrap. Bipolar output rails allow a selectable regulated positive rail and an adjustable negative off-state rail for improved dv/dt immunity. This greatly simplifies system design and reduces EMI through reduced total common-mode (CM) capacitance. It also allows utilization of SiC MOSFETs from multiple vendors without extensive design changes.

  • Power-Thru integrated isolated bias supply
    • No high-side bootstrap or external bias
  • Bipolar drive, selectable regulated positive/negative rails
  • Capable of delivering up to 130 nC gate charge at 25 V
  • 50-ns prop delay, <10 ns skew & pulse-width-distortion
  • Separate output pins pull-up (6 A) & pull-down (6 A)
  • Miller clamp (internal & external options)
  • Supply voltage 10.5 V < VDRV < 13.2 V
  • UVLO on primary VDRV and secondary VSECP supply rails
  • EN enable input and FAULT output pins
  • Over-temperature protection
  • CMTI > 100 V/ns dv/dt immunity
  • Low input-output capacitance <3 pF
  • Wide operating temperature range TA -40°C to 125°C
  • Reinforced isolation, package creepage/clearance > 8 mm
  • Safety Ratings
  • Dynamic offset cancellation
    • 5.7 kV RMS VISO per UL 1577
    • 8 kV pk VIOTM maximum transient isolation voltage
    • 1.5 kV pk VIORM working isolation voltage

NL-24 pin or NK-26 pin packages

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Allegro High Voltage Gate Drivers

GaN and SiC power devices are expected to rapidly gain market share in electric vehicle and green energy applications. Allegro’s isolated gate driver solutions use a single, small-footprint package that integrates an isolated gate driver, an isolated power supply, and associated passive components.

This significantly reduces system design time and complexity and makes it possible for designers to take advantage of the full efficiency benefits that WBG switches provide. Additionally, the reduced system design time and complexity help alleviate the need for additional engineering and design resource

Documentation and Resources